1/6 STPS1L30M ? june 2002 - ed : 1a low drop power schottky rectifier n very small conduction losses n negligible switching losses n extremely fast switching n low forward voltage drop for higher efficiency & extended battery life n low thermal resistance features and benefits single schottky rectifier suited for switch mode power supplies and high frequency dc to dc converters. packaged in st mite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. due to the small size of the package this device fits battery powered equipment (cellular, notebook, pdas, printers) as well chargers and pcmcia cards. description st mite (do-216aa) symbol parameter value unit v rrm repetitive peak reverse voltage 30 v i f(rms) rms forward current 2 a i f(av) average forward current tc = 140c d = 0.5 1 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 50 a t stg storage temperature range - 65 to + 150 c tj maximum operating junction temperature* 150 c dv/dt critical rate of rise of reverse voltage (rated vr, tj = 25c) 10000 v/ m s absolute ratings (limiting values) a c i f(av) 1a v rrm 30 v tj (max) 150c v f (max) 0.38 v main product characteristics *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink
STPS1L30M 2/6 symbol parameter tests conditions value unit min. typ. max. i r * reverse leakage current tj = 25c v r =v rrm 0.13 0.39 ma tj = 85c 5.25 16.5 tj = 25c v r = 20 v 0.05 0.24 tj = 85c 3.5 10.5 tj = 25c v r = 10 v 0.03 0.15 tj = 85c 2.4 7 v f * forward voltage drop tj = 25c i f = 1a 0.33 0.39 v tj = 85c 0.28 0.34 tj = 25c i f = 3 a 0.45 0.53 tj=85c 0.43 0.51 pulse test : * tp 380 s, d 2% to evaluate the conduction losses use the following equation : p=0.34xi f(av) + 0.07 i f 2 (rms) static electrical characteristics symbol parameter value unit r th (j-c) junction to case 20 c/w r th (j-a) junction to ambient with minimum recommended pad size, pc board fr4 250 c/w thermal resistance
STPS1L30M 3/6 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 i (a) f(av) d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 p (w) f(av) t d =tp/t tp fig. 1: conduction losses versus average current. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 150 t (c) amb r th(j-a) =r th(j-c) r th(j-a) =270c/w i (a) f(av) fig. 2: average forward current versus ambient temperature ( d = 0.5) 0 2 4 6 8 10 12 14 16 18 20 22 1.e-03 1.e-02 1.e-01 1.e+00 t(s) t c =25c t c =75c t c =125c i m t d =0.5 i (a) m fig. 3: non repetitive surge peak forward current versus overload duration (maximum values). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 t (s) p zth(j-c)/rth(j-c) d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 024681012141618202224262830 v (v) r t j =150c t j =125c t j =25c t j =100c t j =75c t j =50c i (ma) r fig. 5: reverse leakage current versus reverse voltage applied (typical values). 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 0 25 50 75 100 125 150 tj(c) v r =30v i (ma) r fig. 6: reverse leakage current versus junction temperature (typical values).
STPS1L30M 4/6 10 100 1000 1 10 100 v (v) r f=1mhz v osc =30mv t j =25c c(pf) fig. 7: junction capacitance versus reverse volt- age applied (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 v (v) fm t j =25c (maximum values) t j =85c (maximum values) t j =85c (maximum values) t j =85c (typical values) t j =85c (typical values) i (a) fm fig. 8: forward voltage drop versus forward cur- rent. 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 180 200 s(mm2) r (c/w) th(j-a) fig. 9: thermal resistance junction to ambient ver- sus copper surface under tab (epoxy printed board fr4, cu = 35m, typical values).
STPS1L30M 5/6 package mechanical data st mite c l2 l a1 r1 r 0 to 6 b h b2 d l3 a e ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.85 1.00 1.15 0.033 0.039 0.045 a1 0.10 0.004 b 0.40 0.65 0.016 0.025 b2 0.70 1.00 0.027 0.039 c 0.10 0.25 0.004 0.010 d 1.75 1.90 2.05 0.069 0.007 0.081 e 1.75 1.90 2.05 0.069 0.007 0.081 h 3.60 3.75 3.90 0.142 0.148 0.154 l 0.50 0.63 0.80 0.047 0.025 0.031 l2 1.20 1.35 1.50 0.047 0.053 0.059 l3 0.50 ref (typ.) 0.019 ref (typ.) r 0.07 0.003 r1 0.07 0.003 note: the anode is connected to the longer tab the cathode is connected to the shorter tab (heatsink) 2.67 2.54 0.762 1.27 0.635 footprint (dimensions in mm)
STPS1L30M 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com type marking package weight base qty delivery mode STPS1L30M 1l3 st mite 15.5 mg 12000 tape & reel
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